Electron Beam Coherency Determined from Interferograms of Carbon Nanotubes
نویسندگان
چکیده
منابع مشابه
Electron Beam Irradiation Induced Multiwalled Carbon Nanotubes Fusion inside SEM
This paper reported a method of multiwalled carbon nanotubes (MWCNTs) fusion inside a scanning electron microscope (SEM). A CNT was picked up by nanorobotics manipulator system which was constructed in SEM with 21 DOFs and 1 nm resolution. The CNT was picked up and placed on two manipulators. The tensile force was 140 nN when the CNT was pulled into two parts. Then, two parts of the CNT were co...
متن کاملReinforcing Multi-Wall Carbon Nanotubes by Electron Beam Irradiation
To prepare the samples for Transmission Electron Microscopy (TEM) imaging and Atomic Force Microscopy (AFM) measurements, as-grown carbon nanotubes were dispersed in isopropanol and sonicated using HD2200 homogenizer with a power of 20W for 5 minutes. To characterize the nanotubes by HRTEM, a droplet of the suspension was put on a Cu TEM grid with a lacey C film. Alternatively, we deposited a d...
متن کاملElectron-beam engineering of single-walled carbon nanotubes from bilayer graphene
Bilayer graphene nanoribbons (BGNRs) with a predefined width have been produced directly from bilayer graphene using a transmission electron microscope (TEM) in scanning mode operated at 300 kV. The BGNRs have been subsequently imaged in high-resolution TEM mode at 80 kV. During imaging, the interaction of the electrons with the sample induces structural transformations in the BGNR, such as clo...
متن کاملIon beam analyses of carbon nanotubes.
The utility of ion beam analysis (IBA) techniques to quantitatively determine impurities in carbon nanotubes (CNTs) over a wide range of atomic numbers is demonstrated. Such techniques have not previously been used to monitor impurities and their effects in this unique material. Despite the difficulty in mounting the samples (which generally are formed into a powdery aggregate rather in a thin ...
متن کاملinvestigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
15 صفحه اولذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Bulletin of the Korean Chemical Society
سال: 2013
ISSN: 0253-2964
DOI: 10.5012/bkcs.2013.34.3.892